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Model TP0610K-T1
Description TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,185mA I(D),TO-236
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Brand: VISHAY
Packaging SOT-23-3
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3038) Minimum order quantity(1)
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Technical parameters/drain source resistance: 10.0 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 350 mW

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Input capacitance (Ciss): 23pF @25V(Vds)

Technical parameters/rated power (Max): 350 mW

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/packaging: SOT-23-3

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
TP0610K-T1-GE3 TP0610K-T1-GE3 Vishay Intertechnology 完全替代 SOT-23
VISHAY TP0610K-T1-GE3 MOSFET Transistor, P Channel, -185mA, -60V, 10Ω, -4.5V, -2V
PDF
TP0610K-T1-GE3 TP0610K-T1-GE3 Vishay Siliconix 完全替代 SOT-23-3
VISHAY TP0610K-T1-GE3 MOSFET Transistor, P Channel, -185mA, -60V, 10Ω, -4.5V, -2V
PDF
TP0610K-T1-GE3 TP0610K-T1-GE3 Vishay Semiconductor 完全替代 SOT-23
VISHAY TP0610K-T1-GE3 MOSFET Transistor, P Channel, -185mA, -60V, 10Ω, -4.5V, -2V
PDF
TP0610KL-TR1-E3 TP0610KL-TR1-E3 Vishay Siliconix 功能相似 TO-226-3
MOSFET, P-Channel, -60V, -185mA, 6Ω, TO-226AA (TO-92)
PDF
TP0610KL-TR1-E3 TP0610KL-TR1-E3 VISHAY 功能相似 TO-92-3
MOSFET, P-Channel, -60V, -185mA, 6Ω, TO-226AA (TO-92)
PDF
TP0610KL-TR1-E3 TP0610KL-TR1-E3 Vishay Semiconductor 功能相似 TO-92
MOSFET, P-Channel, -60V, -185mA, 6Ω, TO-226AA (TO-92)
PDF
TP0610KL-TR1-E3 TP0610KL-TR1-E3 Vishay Intertechnology 功能相似 TO-226
MOSFET, P-Channel, -60V, -185mA, 6Ω, TO-226AA (TO-92)

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