Technical parameters/dissipated power: 350mW (Ta)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 23pF @25V(Vds)
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS84PH6327XTSA2
|
Infineon | 功能相似 | SOT-23-3 |
INFINEON BSS84PH6327XTSA2 晶体管, MOSFET, P沟道, -170 mA, -60 V, 5.8 ohm, -10 V, -1.5 V
|
||
TP0610K-T1
|
Vishay Siliconix | 完全替代 | SOT-23-3 |
MOSFET P-CH 60V 185mA SOT23
|
||
TP0610K-T1
|
VISHAY | 完全替代 | SOT-23-3 |
MOSFET P-CH 60V 185mA SOT23
|
||
TP0610K-T1-E3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
|
||
TP0610K-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
|
||
TP0610K-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
|
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