Technical parameters/drain source resistance: 6.00 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 800 mW
Technical parameters/drain source voltage (Vds): -60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -270 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TP0610T
|
Vishay Semiconductor | 功能相似 |
Trans MOSFET P-CH 60V 0.12A 3Pin SOT-23
|
|||
TP0610T-G
|
Microchip | 功能相似 | SOT-23-3 |
Trans MOSFET P-CH 60V 0.12A 3Pin SOT-23
|
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