Technical parameters/drain source resistance: | 10 Ω |
|
Technical parameters/dissipated power: | 350 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS84PH6327XTSA2
|
Infineon | 功能相似 | SOT-23-3 |
INFINEON BSS84PH6327XTSA2 晶体管, MOSFET, P沟道, -170 mA, -60 V, 5.8 ohm, -10 V, -1.5 V
|
||
TP0610K-T1
|
Vishay Siliconix | 完全替代 | SOT-23-3 |
MOSFET P-CH 60V 185mA SOT23
|
||
TP0610K-T1
|
VISHAY | 完全替代 | SOT-23-3 |
MOSFET P-CH 60V 185mA SOT23
|
||
TP0610K-T1-E3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
|
||
TP0610K-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
|
||
TP0610K-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
|
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