Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 10 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): -60.0 V
Technical parameters/Continuous drain current (Ids): -185 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 0.35 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 3.04 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1.02 mm
External dimensions/packaging: SOT-23
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Portable Devices
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS84PH6327XTSA2
|
Infineon | 功能相似 | SOT-23-3 |
INFINEON BSS84PH6327XTSA2 晶体管, MOSFET, P沟道, -170 mA, -60 V, 5.8 ohm, -10 V, -1.5 V
|
||
TP0610K-T1
|
Vishay Siliconix | 完全替代 | SOT-23-3 |
MOSFET P-CH 60V 185mA SOT23
|
||
TP0610K-T1
|
VISHAY | 完全替代 | SOT-23-3 |
MOSFET P-CH 60V 185mA SOT23
|
||
TP0610K-T1-E3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
|
||
TP0610K-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
|
||
TP0610K-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
MOSFET; P-Ch; VDSS -60V; RDS(ON) 10Ω; ID -185mA; TO-236 (SOT-23); PD 350mW; -55℃
|
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