Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Other/FET types: P-Channel
Other/Vgs (maximum value): ±20V
Other/Rds On (Max) @ Id, Vgs: 6 Ohms @ 500mA,10V
Other/continuous drain current Id: 270mA(Ta)
Other/drain source voltage Vds: 60V
Other/working temperature: -55℃~150℃
Other/Packaging/Shell: TO-226-3,TO-92-3(TO-226AA)(Forming leads
Other/Vgs (th): 3V @ 250uA
Other/Pd - power dissipation (Max): 800mW(Ta)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TP0610T
|
Vishay Semiconductor | 功能相似 |
Trans MOSFET P-CH 60V 0.12A 3Pin SOT-23
|
|||
TP0610T-G
|
Microchip | 功能相似 | SOT-23-3 |
Trans MOSFET P-CH 60V 0.12A 3Pin SOT-23
|
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