Technical parameters/dissipated power: 15 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/rise time: 20 ns
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800mW (Ta), 15W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
|
|
Harris | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
2N6784
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
2N6784
|
Fairchild | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
IRFF210
|
TT Electronics Resistors | 功能相似 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
|||
IRFF210
|
Infineon | 功能相似 | TO-205 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
||
IRFF210PBF
|
Infineon | 功能相似 | TO-39 |
TO-39 N-CH 200V 2.25A
|
||
JANTXV2N6784
|
Microchip | 功能相似 |
MOSFET N-CH
|
|||
JANTXV2N6784
|
Infineon | 功能相似 | TO-205 |
MOSFET N-CH
|
||
JANTXV2N6784
|
International Rectifier | 功能相似 | TO-39 |
MOSFET N-CH
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review