Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 140pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 15000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
|
|
Harris | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
2N6784
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
2N6784
|
Fairchild | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
|
IRFF210
|
TT Electronics Resistors | 完全替代 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
|||
IRFF210
|
Infineon | 完全替代 | TO-205 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
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