Technical parameters/drain source resistance: 1.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 15.0 W
Technical parameters/product series: IRFF210
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 2.25 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Infineon | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
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|
|
Harris | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
2N6784
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
2N6784
|
Fairchild | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
IRFF210
|
TT Electronics Resistors | 功能相似 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
|||
IRFF210
|
Infineon | 功能相似 | TO-205 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
||
IRFF210PBF
|
Infineon | 功能相似 | TO-39 |
TO-39 N-CH 200V 2.25A
|
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