Technical parameters/dissipated power: 15000 mW
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 140pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 15000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 |
2.25A , 200V , 1.500 Ohm的N通道功率MOSFET 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
|||
|
|
Harris | 功能相似 |
2.25A , 200V , 1.500 Ohm的N通道功率MOSFET 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
|||
2N6784
|
International Rectifier | 功能相似 |
2.25A , 200V , 1.500 Ohm的N通道功率MOSFET 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
|||
2N6784
|
Fairchild | 功能相似 |
2.25A , 200V , 1.500 Ohm的N通道功率MOSFET 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
|||
JANTXV2N6784
|
Microchip | 完全替代 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
|||
JANTXV2N6784
|
Infineon | 完全替代 | TO-205 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
||
JANTXV2N6784
|
International Rectifier | 完全替代 | TO-39 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
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