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Model 2N6784
Description Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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Brand: Infineon
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7698) Minimum order quantity(1)
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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N6784 2N6784 Infineon 功能相似
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
2N6784 2N6784 Harris 功能相似
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
PDF
2N6784 2N6784 International Rectifier 功能相似
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
PDF
2N6784 2N6784 Fairchild 功能相似
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
PDF
IRFF210 IRFF210 TT Electronics Resistors 功能相似
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
PDF
IRFF210 IRFF210 Infineon 功能相似 TO-205
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
PDF
IRFF210PBF IRFF210PBF Infineon 功能相似 TO-39
TO-39 N-CH 200V 2.25A
PDF

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