Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 2.25A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFF210
|
TT Electronics Resistors | 功能相似 |
2.2A , 200V , 1.500 Ohm的N通道功率MOSFET 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
|||
IRFF210
|
Infineon | 功能相似 | TO-205 |
2.2A , 200V , 1.500 Ohm的N通道功率MOSFET 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
||
|
|
Infineon | 功能相似 | 3 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
||
JANTX2N6784
|
International Rectifier | 功能相似 | TO-205 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
||
JANTX2N6784
|
Microsemi | 功能相似 | TO-39 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
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