Technical parameters/dissipated power: 15000 mW
Technical parameters/product series: IRFF210
Technical parameters/Input capacitance (Ciss): 140pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 15000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/height: 4.54 mm
External dimensions/packaging: TO-205
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
|
|
Harris | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
2N6784
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
2N6784
|
Fairchild | 功能相似 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
|
|||
IRFF210
|
TT Electronics Resistors | 功能相似 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
|||
IRFF210
|
Infineon | 功能相似 | TO-205 |
Trans MOSFET N-CH 200V 2.25A 3Pin TO-39
|
||
IRFF210PBF
|
Infineon | 功能相似 | TO-39 |
TO-39 N-CH 200V 2.25A
|
||
JANTXV2N6784
|
Microchip | 功能相似 |
MOSFET N-CH
|
|||
JANTXV2N6784
|
Infineon | 功能相似 | TO-205 |
MOSFET N-CH
|
||
JANTXV2N6784
|
International Rectifier | 功能相似 | TO-39 |
MOSFET N-CH
|
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