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Model IRF510STRLPBF
Description Trans MOSFET N-CH 100V 5.6A 3Pin(2+Tab) D2PAK T/R
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.98  yuan 2.98yuan
5+:
$ 4.0271
25+:
$ 3.7288
50+:
$ 3.5199
100+:
$ 3.4305
500+:
$ 3.3708
2500+:
$ 3.2962
5000+:
$ 3.2664
10000+:
$ 3.2216
Quantity
5+
25+
50+
100+
500+
Price
$4.0271
$3.7288
$3.5199
$3.4305
$3.3708
Price $ 4.0271 $ 3.7288 $ 3.5199 $ 3.4305 $ 3.3708
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2732) Minimum order quantity(5)
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Technical parameters/polarity: N-Channel

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Continuous drain current (Ids): 5.60 A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/width: 9.65 mm

External dimensions/packaging: TO-263-3

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF510S IRF510S Vishay Siliconix 类似代替 TO-263-3
MOSFET N-CH 100V 5.6A D2PAK
PDF
IRF510S IRF510S International Rectifier 类似代替
MOSFET N-CH 100V 5.6A D2PAK
PDF
IRF510S IRF510S VISHAY 类似代替 TO-263
MOSFET N-CH 100V 5.6A D2PAK
PDF
IRF510SPBF IRF510SPBF VISHAY 功能相似 TO-263-3
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
PDF
IRF510SPBF IRF510SPBF Vishay Siliconix 功能相似 TO-263-3
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
PDF
IRF510SPBF IRF510SPBF International Rectifier 功能相似 D2PAK
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
PDF
IRF510SPBF IRF510SPBF Vishay Intertechnology 功能相似 D2PAK
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
PDF
IRF510STRLPBF IRF510STRLPBF Vishay Intertechnology 功能相似
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
PDF
IRF510STRLPBF IRF510STRLPBF Vishay Semiconductor 功能相似 TO-263-3
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
PDF
IRF510STRLPBF IRF510STRLPBF Vishay Siliconix 功能相似 TO-263-3
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
PDF
IRF510STRRPBF IRF510STRRPBF International Rectifier 类似代替
MOSFET N-CH 100V 5.6A D2PAK
PDF
IRF510STRRPBF IRF510STRRPBF Vishay Siliconix 类似代替 TO-263-3
MOSFET N-CH 100V 5.6A D2PAK
PDF
IRF510STRRPBF IRF510STRRPBF VISHAY 类似代替 TO-252-3
MOSFET N-CH 100V 5.6A D2PAK
PDF
IRF510STRRPBF IRF510STRRPBF Vishay Semiconductor 类似代替 TO-263-3
MOSFET N-CH 100V 5.6A D2PAK
PDF

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