Technical parameters/drain source resistance: 540 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.7 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 5.60 A
Technical parameters/rise time: 16 ns
Technical parameters/Input capacitance (Ciss): 180pF @25V(Vds)
Technical parameters/descent time: 9.4 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3700 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF510STRLPBF
|
Vishay Intertechnology | 类似代替 |
MOSFET N-CH 100V 5.6A D2PAK
|
|||
IRF510STRLPBF
|
Vishay Semiconductor | 类似代替 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRF510STRLPBF
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
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