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Model IRF510SPBF

Description N 通道 MOSFET，100V 至 150V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor

Brand: VISHAY

Packaging TO-263-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(7624) Minimum order quantity(1)

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.54 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	3.7 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Continuous drain current (Ids):	5.60 A
Technical parameters/rise time:	16 ns
Technical parameters/Input capacitance (Ciss):	180pF @25V(Vds)
Technical parameters/rated power (Max):	3.7 W
Technical parameters/descent time:	9.4 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	3.7 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-263-3
Dimensions/Height:	4.83 mm
Dimensions/Packaging:	TO-263-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Other/Minimum Packaging:	2000
Other/Manufacturing Applications:	Industrial, power management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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IRF510SPBF	International Rectifier	功能相似	D2PAK	Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3	PDF
IRF510SPBF	Vishay Intertechnology	功能相似	D2PAK	Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3	PDF
IRF510STRLPBF	Vishay Intertechnology	功能相似		Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3	PDF
IRF510STRLPBF	Vishay Semiconductor	功能相似	TO-263-3	Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3	PDF
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