Technical parameters/dissipated power: | 3.7W (Ta), 43W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Input capacitance (Ciss): | 180pF @25V(Vds) |
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Technical parameters/dissipated power (Max): | 3.7W (Ta), 43W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Length: | 10.67 mm |
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Dimensions/Width: | 9.65 mm |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF510SPBF
|
VISHAY | 类似代替 | TO-263-3 |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
IRF510SPBF
|
Vishay Siliconix | 类似代替 | TO-263-3 |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
IRF510SPBF
|
International Rectifier | 类似代替 | D2PAK |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
IRF510SPBF
|
Vishay Intertechnology | 类似代替 | D2PAK |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
|
IRF510STRLPBF
|
Vishay Intertechnology | 类似代替 |
MOSFET N-CH 100V 5.6A D2PAK
|
|||
IRF510STRLPBF
|
Vishay Semiconductor | 类似代替 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRF510STRLPBF
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
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