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Model IRF510SPBF
Description Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
Product QR code
Brand: Vishay Siliconix
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.22  yuan 4.22yuan
5+:
$ 5.6903
25+:
$ 5.2688
50+:
$ 4.9737
100+:
$ 4.8473
500+:
$ 4.7630
2500+:
$ 4.6576
5000+:
$ 4.6154
10000+:
$ 4.5522
Quantity
5+
25+
50+
100+
500+
Price
$5.6903
$5.2688
$4.9737
$4.8473
$4.7630
Price $ 5.6903 $ 5.2688 $ 4.9737 $ 4.8473 $ 4.7630
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4200) Minimum order quantity(5)
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Technical parameters/dissipated power: 3700 mW

Technical parameters/rise time: 16 ns

Technical parameters/Input capacitance (Ciss): 180pF @25V(Vds)

Technical parameters/descent time: 9.4 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 3.7W (Ta), 43W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF510S IRF510S Vishay Siliconix 类似代替 TO-263-3
MOSFET N-CH 100V 5.6A D2PAK
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IRF510S IRF510S International Rectifier 类似代替
MOSFET N-CH 100V 5.6A D2PAK
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IRF510S IRF510S VISHAY 类似代替 TO-263
MOSFET N-CH 100V 5.6A D2PAK
PDF
IRF510SPBF IRF510SPBF VISHAY 功能相似 TO-263-3
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
PDF
IRF510SPBF IRF510SPBF Vishay Siliconix 功能相似 TO-263-3
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
PDF
IRF510SPBF IRF510SPBF International Rectifier 功能相似 D2PAK
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
PDF
IRF510SPBF IRF510SPBF Vishay Intertechnology 功能相似 D2PAK
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
PDF
IRF510STRLPBF IRF510STRLPBF Vishay Intertechnology 功能相似
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
PDF
IRF510STRLPBF IRF510STRLPBF Vishay Semiconductor 功能相似 TO-263-3
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
PDF
IRF510STRLPBF IRF510STRLPBF Vishay Siliconix 功能相似 TO-263-3
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
PDF

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