Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 5.60 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 43.0 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 5.60 A
Technical parameters/rise time: 16.0 ns
Encapsulation parameters/installation method: Surface Mount
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF510SPBF
|
VISHAY | 类似代替 | TO-263-3 |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
IRF510SPBF
|
Vishay Siliconix | 类似代替 | TO-263-3 |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
IRF510SPBF
|
International Rectifier | 类似代替 | D2PAK |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
IRF510SPBF
|
Vishay Intertechnology | 类似代替 | D2PAK |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
|
IRF510STRLPBF
|
Vishay Intertechnology | 类似代替 |
MOSFET N-CH 100V 5.6A D2PAK
|
|||
IRF510STRLPBF
|
Vishay Semiconductor | 类似代替 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRF510STRLPBF
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
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