Technical parameters/drain source resistance: 60 Ω
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage: 40 V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.97 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSR58,215
|
NXP | 功能相似 | SOT-23-3 |
JFET N-CH 40V 0.25W(1/4W) SOT23
|
||
PMBF4393,215
|
NXP | 功能相似 | SOT-23-3 |
N 通道 JFET,NXP ### JFET 晶体管 一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
|
||
PMBF4393@215
|
NXP | 类似代替 | SOT-23-3 |
PMBF4393@215
|
||
PMBFJ111,215
|
NXP | 功能相似 | SOT-23-3 |
PMBFJ111,215 N通道 JFET 晶体管 40 V, 3引脚 TO-236AB封装 min. 20mA
|
||
SST201-T1-E3
|
VISHAY | 功能相似 | TO-236 |
VISHAY SST201-T1-E3 JFET Transistor, JFET, -40V, 200A, 1mA, -1.5V, TO-236, JFET
|
||
SST201-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY SST201-T1-E3 JFET Transistor, JFET, -40V, 200A, 1mA, -1.5V, TO-236, JFET
|
||
SST204-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
JFET N-CH 25V 0.7mA SOT-23
|
||
SST204-E3
|
Vishay Semiconductor | 功能相似 | TO-236 |
JFET N-CH 25V 0.7mA SOT-23
|
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