Technical parameters/drain source resistance: 60 Ω
Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/breakdown voltage: 40 V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSR57
|
National Semiconductor | 功能相似 |
N 通道 JFET，Fairchild Semiconductor ### JFET 晶体管 一系列 JFET（接线场效应晶体管）和 HEMT/HFET（高电子迁移率晶体管/异质结 FET）分立半导体设备。
|
|||
BSR57
|
ON Semiconductor | 功能相似 | SOT-23-3 |
N 通道 JFET，Fairchild Semiconductor ### JFET 晶体管 一系列 JFET（接线场效应晶体管）和 HEMT/HFET（高电子迁移率晶体管/异质结 FET）分立半导体设备。
|
||
BSR58
|
NXP | 功能相似 | SOT-23 |
ON Semiconductor BSR58 N通道 JFET 晶体管, Vds=0.4 V, Idss: 8 → 80mA, 3引脚 SOT-23封装
|
||
BSR58
|
Fairchild | 功能相似 | SOT-23-3 |
ON Semiconductor BSR58 N通道 JFET 晶体管, Vds=0.4 V, Idss: 8 → 80mA, 3引脚 SOT-23封装
|
||
BSR58
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON Semiconductor BSR58 N通道 JFET 晶体管, Vds=0.4 V, Idss: 8 → 80mA, 3引脚 SOT-23封装
|
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