Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Other/maximum source drain voltage VdsDrain Source Voltage: | 40v |
|
Other/Gate Source Breakdown Voltage V (BR) GSGate Source Voltage: | -40v |
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Other/drain current (Vgs=0V) IDSSDrain Current: | 8~80ma |
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Other/Off Voltage Vgs (off) Gate Source Cut off Voltage: | 0.8~4v |
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Other/dissipated power PdPower Dissipation: | 250mW/0.25W |
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Other/Specification PDF: | __ |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSR58,215
|
NXP | 功能相似 | SOT-23-3 |
JFET N-CH 40V 0.25W(1/4W) SOT23
|
||
PMBF4393,215
|
NXP | 功能相似 | SOT-23-3 |
N 通道 JFET,NXP ### JFET 晶体管 一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
|
||
PMBF4393@215
|
NXP | 类似代替 | SOT-23-3 |
PMBF4393@215
|
||
PMBFJ111,215
|
NXP | 功能相似 | SOT-23-3 |
PMBFJ111,215 N通道 JFET 晶体管 40 V, 3引脚 TO-236AB封装 min. 20mA
|
||
SST201-T1-E3
|
VISHAY | 功能相似 | TO-236 |
VISHAY SST201-T1-E3 JFET Transistor, JFET, -40V, 200A, 1mA, -1.5V, TO-236, JFET
|
||
SST201-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY SST201-T1-E3 JFET Transistor, JFET, -40V, 200A, 1mA, -1.5V, TO-236, JFET
|
||
SST204-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
JFET N-CH 25V 0.7mA SOT-23
|
||
SST204-E3
|
Vishay Semiconductor | 功能相似 | TO-236 |
JFET N-CH 25V 0.7mA SOT-23
|
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