Technical parameters/breakdown voltage: | 40.0 V|40 V |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 100 Ω |
|
Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/Input capacitance (Ciss): | 14pF @20V(Vds) |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Length: | 3 mm |
|
Dimensions/Width: | 1.4 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSR58
|
NXP | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BSR58 晶体管, JFET, JFET, 40 V, 8 mA, 80 mA, 4 V, SOT-23, JFET
|
||
BSR58
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BSR58 晶体管, JFET, JFET, 40 V, 8 mA, 80 mA, 4 V, SOT-23, JFET
|
||
BSR58
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BSR58 晶体管, JFET, JFET, 40 V, 8 mA, 80 mA, 4 V, SOT-23, JFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review