Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/Continuous drain current (Ids): 3.00 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/height: 1.02 mm
External dimensions/packaging: TO-236
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBFJ201
|
Fairchild | 类似代替 | SOT-23-3 |
ON Semiconductor MMBFJ201 N通道 JFET 晶体管, Idss: 0.3 → 1.5mA, 3引脚 SOT-23封装
|
||
MMBFJ202
|
ON Semiconductor | 类似代替 | SOT-23-3 |
MMBFJ202 系列 40 V 4.5 mA N 沟道 通用 放大器 - SOT-23
|
||
MMBFJ202
|
Fairchild | 类似代替 | SOT-23-3 |
MMBFJ202 系列 40 V 4.5 mA N 沟道 通用 放大器 - SOT-23
|
||
PMBF4393,215
|
NXP | 功能相似 | SOT-23-3 |
N 通道 JFET,NXP ### JFET 晶体管 一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
|
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