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Model MMBFJ201

Description FAIRCHILD SEMICONDUCTOR MMBFJ201 晶体管, JFET, JFET, -40 V, 200 µA, 1 mA, -1.5 V, SOT-23, JFET

Brand: Fairchild

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	40.0 V
Technical parameters/rated current:	50.0 mA
Technical parameters/rated power:	350 mW
Technical parameters/breakdown voltage:	-40.0 V\|40 V
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	350 mW
Technical parameters/drain source voltage (Vds):	40.0 V
Technical parameters/breakdown voltage of gate source:	40.0 V
Technical parameters/Continuous drain current (Ids):	600 mA
Technical parameters/rated power (Max):	350 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	350 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	2.92 mm
Dimensions/Width:	1.3 mm
Dimensions/Height:	0.93 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	ECL99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
MMBFJ201	Fairchild	类似代替	SOT-23-3	ON Semiconductor MMBFJ201 N通道 JFET 晶体管, Idss: 0.3 → 1.5mA, 3引脚 SOT-23封装	PDF
PMBFJ111,215	NXP	功能相似	SOT-23-3	PMBFJ111,215 N通道 JFET 晶体管 40 V, 3引脚 TO-236AB封装 min. 20mA	PDF
SST201-T1-E3	VISHAY	类似代替	TO-236	晶体管, JFET, -40V, TO-236, 整卷	PDF
SST201-T1-E3	Vishay Siliconix	类似代替	SOT-23-3	晶体管, JFET, -40V, TO-236, 整卷	PDF