Technical parameters/breakdown voltage: -40.0 V|40 V
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/leakage source breakdown voltage: -300 mV
Technical parameters/breakdown voltage of gate source: -1.50 V
Technical parameters/Continuous drain current (Ids): 1.00 mA
Technical parameters/Input capacitance (Ciss): 4.5pF @15V(Vds)
Technical parameters/rated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBFJ201
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ201 晶体管, JFET, JFET, -40 V, 200 µA, 1 mA, -1.5 V, SOT-23, JFET
|
||
MMBFJ202
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ202. 晶体管, JFET, 40V, 3-SOT-23
|
||
MMBFJ202
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ202. 晶体管, JFET, 40V, 3-SOT-23
|
||
PMBF4393,215
|
NXP | 功能相似 | SOT-23-3 |
N 通道 JFET，NXP ### JFET 晶体管 一系列 JFET（接线场效应晶体管）和 HEMT/HFET（高电子迁移率晶体管/异质结 FET）分立半导体设备。
|
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