Technical parameters/breakdown voltage: | -40.0 V|40 V |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 30 Ω |
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Technical parameters/dissipated power: | 300 mW |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/Input capacitance (Ciss): | 6pF @10V(Vgs) |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBFJ201
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ201 晶体管, JFET, JFET, -40 V, 200 µA, 1 mA, -1.5 V, SOT-23, JFET
|
||
MMBFJ202
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ202. 晶体管, JFET, 40V, 3-SOT-23
|
||
MMBFJ202
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ202. 晶体管, JFET, 40V, 3-SOT-23
|
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