Technical parameters/polarity: Dual N-Channel
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SO-8
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4816BDY-T1-E3
|
VISHAY | 完全替代 | SOIC-8 |
Trans MOSFET N-CH 30V 5.8A/8.2A 8Pin SOIC N T/R
|
||
SI4816BDY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
Trans MOSFET N-CH 30V 5.8A/8.2A 8Pin SOIC N T/R
|
||
SI4816BDY-T1-E3
|
Vishay Semiconductor | 完全替代 | SOIC-8 |
Trans MOSFET N-CH 30V 5.8A/8.2A 8Pin SOIC N T/R
|
||
SI4816DY-T1-E3
|
VISHAY | 类似代替 | SOIC |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
|
||
|
|
Vishay Intertechnology | 类似代替 |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
|
|||
SI4816DY-T1-E3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
|
||
SI4816DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SO |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
|
||
SI4816DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH DUAL 30V 8-SOIC
|
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