Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4816BDY-T1-GE3
|
Vishay Semiconductor | 完全替代 | SOIC-8 |
MOSFET DL N-CH 30V 6.8A 8-SOIC
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||
SI4816BDY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET DL N-CH 30V 6.8A 8-SOIC
|
||
SI4816DY-T1-E3
|
VISHAY | 完全替代 | SOIC |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
|
||
|
|
Vishay Intertechnology | 完全替代 |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
|
|||
SI4816DY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
|
||
SI4816DY-T1-E3
|
Vishay Semiconductor | 完全替代 | SO |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
|
||
SI4816DY-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH DUAL 30V 8-SOIC
|
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