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Model SI4816DY-T1-E3
Description Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Product QR code
Brand: Vishay Semiconductor
Packaging SO
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6711) Minimum order quantity(1)
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Technical parameters/drain source resistance: 22.0 mΩ

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 1.25 W

Technical parameters/drain source voltage (Vds): 30.0 V

Technical parameters/breakdown voltage of gate source: 20.0 V

Technical parameters/Continuous drain current (Ids): 5.30 A

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4816BDY-T1-E3 SI4816BDY-T1-E3 VISHAY 完全替代 SOIC-8
Trans MOSFET N-CH 30V 5.8A/8.2A 8Pin SOIC N T/R
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SI4816BDY-T1-E3 SI4816BDY-T1-E3 Vishay Siliconix 完全替代 SOIC-8
Trans MOSFET N-CH 30V 5.8A/8.2A 8Pin SOIC N T/R
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SI4816BDY-T1-E3 SI4816BDY-T1-E3 Vishay Semiconductor 完全替代 SOIC-8
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SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Vishay Semiconductor 类似代替 SOIC-8
MOSFET DL N-CH 30V 6.8A 8-SOIC
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SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Vishay Siliconix 类似代替 SOIC-8
MOSFET DL N-CH 30V 6.8A 8-SOIC
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SI4816DY-T1-GE3 SI4816DY-T1-GE3 Vishay Semiconductor 完全替代
MOSFET N-CH DUAL 30V 8-SOIC
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