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Model SI4816BDY-T1-E3

Description Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Brand: VISHAY

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.0155 Ω
Technical parameters/polarity:	N-Channel, Dual N-Channel
Technical parameters/dissipated power:	1 W
Technical parameters/threshold voltage:	3 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	5.80 A
Technical parameters/rise time:	9 ns
Technical parameters/rated power (Max):	1W, 1.25W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	2500
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

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