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Model SI4816DY-T1-E3
Description DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
Product QR code
Brand: Vishay Siliconix
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
15.68  yuan 15.68yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6424) Minimum order quantity(1)
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Technical parameters/drain source resistance:

22.0 mΩ

 

Technical parameters/polarity:

Dual N-Channel

 

Technical parameters/dissipated power:

1.25 W

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/breakdown voltage of gate source:

20.0 V

 

Technical parameters/Continuous drain current (Ids):

5.30 A

 

Technical parameters/rated power (Max):

1W, 1.25W

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4816BDY-T1-E3 SI4816BDY-T1-E3 VISHAY 完全替代 SOIC-8
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SI4816DY-T1-GE3 SI4816DY-T1-GE3 Vishay Semiconductor 完全替代
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