Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0093 Ω
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 5.80 A
Technical parameters/rise time: 9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
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|---|---|---|---|---|---|---|
SI4816BDY-T1-GE3
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Vishay Semiconductor | 完全替代 | SOIC-8 |
MOSFET DL N-CH 30V 6.8A 8-SOIC
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SI4816BDY-T1-GE3
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Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET DL N-CH 30V 6.8A 8-SOIC
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SI4816DY-T1-E3
|
VISHAY | 完全替代 | SOIC |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
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Vishay Intertechnology | 完全替代 |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
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|||
SI4816DY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
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SI4816DY-T1-E3
|
Vishay Semiconductor | 完全替代 | SO |
DUAL N CH/SCHOTTKY MOSFET, 30V SOIC; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id, N Channe...
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||
SI4816DY-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH DUAL 30V 8-SOIC
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