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Model SI4816BDY-T1-GE3
Description VISHAY SI4816BDY-T1-GE3. 场效应管, MOSFET, 双N沟道, 30V, SOIC
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.53  yuan 2.53yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6000) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.0155 Ω

 

Technical parameters/polarity:

N-Channel, Dual N-Channel

 

Technical parameters/dissipated power:

1.25 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/rise time:

9 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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SI4816BDY-T1-E3 SI4816BDY-T1-E3 Vishay Siliconix 完全替代 SOIC-8
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SI4816DY-T1-E3 SI4816DY-T1-E3 Vishay Intertechnology 类似代替
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SI4816DY-T1-E3 SI4816DY-T1-E3 Vishay Semiconductor 类似代替 SO
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