Technical parameters/drain source resistance: 90.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4953ADY
|
Vishay Siliconix | 完全替代 | SO |
MOSFET 30V 4.9A 2W
|
||
SI4953ADY
|
Vishay Semiconductor | 完全替代 | SO |
MOSFET 30V 4.9A 2W
|
||
SI4953ADY
|
VISHAY | 完全替代 |
MOSFET 30V 4.9A 2W
|
|||
SI4953ADY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET P-CH DUAL 30V 3.7A 8-SOIC
|
||
SI4953ADY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET P-CH DUAL 30V 3.7A 8-SOIC
|
||
SI4953ADY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET 30V 3.9A 2W 53mohm @ 10V
|
||
SI4953ADY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET 30V 3.9A 2W 53mohm @ 10V
|
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