Technical parameters/drain source resistance: 53 mΩ
Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 3.7A
Technical parameters/rise time: 10 ns
Technical parameters/rated power (Max): 1.1 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9333PBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF9333PBF 晶体管, MOSFET, P沟道, -9.2 A, -30 V, 15.6 mohm, -10 V, -1.8 V
|
||
IRF9333PBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRF9333PBF 晶体管, MOSFET, P沟道, -9.2 A, -30 V, 15.6 mohm, -10 V, -1.8 V
|
||
SI4953ADY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
VISHAY SI4953ADY-T1-E3 场效应管, MOSFET, 双P沟道, -30V, SOIC-8
|
||
SI4953ADY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
VISHAY SI4953ADY-T1-E3 场效应管, MOSFET, 双P沟道, -30V, SOIC-8
|
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