Technical parameters/drain source resistance: 32.5 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: IRF9333
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -9.20 A
Technical parameters/Input capacitance (Ciss): 1110pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7416PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7416PBF. 晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
|
||
IRF7416PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7416PBF. 晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
|
||
IRF9333TRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF9333TRPBF 场效应管, MOSFET, P沟道, -30V, -9.2A, SOIC
|
||
IRF9333TRPBF
|
IFC | 类似代替 |
INFINEON IRF9333TRPBF 场效应管, MOSFET, P沟道, -30V, -9.2A, SOIC
|
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