Technical parameters/drain source resistance: 0.09 Ω
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 4.90 A, -4.90 A
Technical parameters/rated power (Max): 1.1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4925DDY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
VISHAY SILICONIX SI4925DDY-T1-GE3 场效应管, MOSFET, 双P沟道, 30V, 8A, SOIC-8
|
||
SI4973DY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
||
|
|
VISHAY | 完全替代 | SOP-8 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
||
SI4973DY-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review