Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5.8A
Technical parameters/rise time: 15 ns
Technical parameters/descent time: 90 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP-8
External dimensions/packaging: SOP-8
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4923DY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET P-CH DUAL 30V 8-SOIC
|
||
SI4953ADY-T1-E3
|
VISHAY | 完全替代 | SOIC-8 |
MOSFET P-CH DUAL 30V 3.7A 8-SOIC
|
||
SI4953ADY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET P-CH DUAL 30V 3.7A 8-SOIC
|
||
SI4953ADY-T1-GE3
|
Vishay Semiconductor | 完全替代 | SOIC |
MOSFET 30V 3.9A 2W 53mohm @ 10V
|
||
SI4953ADY-T1-GE3
|
VISHAY | 完全替代 | SOIC-8 |
MOSFET 30V 3.9A 2W 53mohm @ 10V
|
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