Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 3.7A
Technical parameters/rated power (Max): 1.1 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4925DDY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
VISHAY SILICONIX SI4925DDY-T1-GE3 场效应管, MOSFET, 双P沟道, 30V, 8A, SOIC-8
|
||
SI4973DY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
||
|
|
VISHAY | 完全替代 | SOP-8 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
||
SI4973DY-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
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