Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rated power (Max): 1.1 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4923DY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET P-CH DUAL 30V 8-SOIC
|
||
SI4953ADY-T1-E3
|
VISHAY | 完全替代 | SOIC-8 |
MOSFET P-CH DUAL 30V 3.7A 8-SOIC
|
||
SI4953ADY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET P-CH DUAL 30V 3.7A 8-SOIC
|
||
SI4953ADY-T1-GE3
|
Vishay Semiconductor | 完全替代 | SOIC |
MOSFET 30V 3.9A 2W 53mohm @ 10V
|
||
SI4953ADY-T1-GE3
|
VISHAY | 完全替代 | SOIC-8 |
MOSFET 30V 3.9A 2W 53mohm @ 10V
|
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