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Model SI4953ADY-T1-GE3
Description VISHAY SI4953ADY-T1-GE3 Field effect transistor, MOSFET, dual P-channel, -30V, 4.9A
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Brand: Vishay Semiconductor
Packaging SOIC
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2784) Minimum order quantity(1)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 53 mΩ

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1.1 W

Technical parameters/drain source voltage (Vds): -30.0 V

Technical parameters/Continuous drain current (Ids): -4.90 A

Technical parameters/rise time: 10 ns

Technical parameters/descent time: 20 ns

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

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