Technical parameters/drain source resistance: | 90.0 mΩ |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 2.00 W |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | -3.70 A |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SO |
|
Dimensions/Packaging: | SO |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4953ADY
|
Vishay Siliconix | 完全替代 | SO |
MOSFET 30V 4.9A 2W
|
||
SI4953ADY
|
Vishay Semiconductor | 完全替代 | SO |
MOSFET 30V 4.9A 2W
|
||
SI4953ADY
|
VISHAY | 完全替代 |
MOSFET 30V 4.9A 2W
|
|||
SI4953ADY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET P-CH DUAL 30V 3.7A 8-SOIC
|
||
SI4953ADY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET P-CH DUAL 30V 3.7A 8-SOIC
|
||
SI4953ADY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET 30V 3.9A 2W 53mohm @ 10V
|
||
SI4953ADY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET 30V 3.9A 2W 53mohm @ 10V
|
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