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Model IRF6727MTRPBF
Description INFINEON IRF6727MTRPBF 晶体管, MOSFET, N沟道, 180 A, 30 V, 0.00122 ohm, 10 V, 1.8 V 新
Product QR code
Brand: Infineon
Packaging Direct-FET
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.92  yuan 7.92yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8094) Minimum order quantity(1)
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Technical parameters/rated power:

89 W

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

7

 

Technical parameters/drain source resistance:

0.00122 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

89 W

 

Technical parameters/threshold voltage:

1.8 V

 

Technical parameters/Input capacitance:

6190 pF

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30 V

 

Technical parameters/Continuous drain current (Ids):

32A

 

Technical parameters/rise time:

31 ns

 

Technical parameters/Input capacitance (Ciss):

6190pF @15V(Vds)

 

Technical parameters/descent time:

16 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Technical parameters/dissipated power (Max):

2.8W (Ta), 89W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

7

 

Encapsulation parameters/Encapsulation:

Direct-FET

 

Dimensions/Length:

6.35 mm

 

Dimensions/Width:

5.05 mm

 

Dimensions/Height:

0.7 mm

 

Dimensions/Packaging:

Direct-FET

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-40℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant w

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