Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 32.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 89.0 W
Technical parameters/product series: IRF6635
Technical parameters/input capacitance: 5.97 nF
Technical parameters/gate charge: 71.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 25.0 A, 32.0 mA
Technical parameters/rise time: 13.0 ns
Technical parameters/Input capacitance (Ciss): 5970pF @15V(Vds)
Technical parameters/rated power (Max): 2.8 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DirectFET-3
External dimensions/packaging: DirectFET-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6635
|
IRF | 功能相似 |
Direct-FET N-CH 30V 32A
|
|||
IRF6635
|
Infineon | 功能相似 | Direct-FET |
Direct-FET N-CH 30V 32A
|
||
IRF6635TR1PBF
|
International Rectifier | 功能相似 | DirectFET-4 |
Direct-FET N-CH 30V 32A
|
||
IRF6727MTRPBF
|
Infineon | 功能相似 | Direct-FET |
INFINEON IRF6727MTRPBF 晶体管, MOSFET, N沟道, 180 A, 30 V, 0.00122 ohm, 10 V, 1.8 V 新
|
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