Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 32.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.8W (Ta), 89W (Tc)
Technical parameters/product series: IRF6635
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 32.0 A
Technical parameters/rise time: 13.0 ns
Technical parameters/Input capacitance (Ciss): 5970pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.8W (Ta), 89W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: Direct-FET
External dimensions/packaging: Direct-FET
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6635TRPBF
|
Infineon | 功能相似 | DirectFET-MX |
INFINEON IRF6635TRPBF 晶体管, MOSFET, N沟道, 180 A, 30 V, 0.0013 ohm, 10 V, 1.8 V 新
|
||
IRF6635TRPBF
|
International Rectifier | 功能相似 | DirectFET-3 |
INFINEON IRF6635TRPBF 晶体管, MOSFET, N沟道, 180 A, 30 V, 0.0013 ohm, 10 V, 1.8 V 新
|
||
IRF6727MTRPBF
|
Infineon | 类似代替 | Direct-FET |
INFINEON IRF6727MTRPBF 晶体管, MOSFET, N沟道, 180 A, 30 V, 0.00122 ohm, 10 V, 1.8 V 新
|
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