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Model IRF6635TRPBF

Description INFINEON IRF6635TRPBF 晶体管, MOSFET, N沟道, 180 A, 30 V, 0.0013 ohm, 10 V, 1.8 V 新

Brand: Infineon

Packaging DirectFET-MX

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	89 W
Technical parameters/number of pins:	7
Technical parameters/drain source resistance:	0.0013 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	89 W
Technical parameters/threshold voltage:	1.8 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	32A
Technical parameters/rise time:	13 ns
Technical parameters/Input capacitance (Ciss):	5970pF @15V(Vds)
Technical parameters/rated power (Max):	2.8 W
Technical parameters/descent time:	8.3 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/dissipated power (Max):	2.8W (Ta), 89W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	7
Encapsulation parameters/Encapsulation:	DirectFET-MX
Dimensions/Length:	6.35 mm
Dimensions/Width:	5.05 mm
Dimensions/Height:	0.7 mm
Dimensions/Packaging:	DirectFET-MX
Physical parameters/operating temperature:	-40℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Obsolete
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	MultiPhase SyncFET, HotSwap
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17

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