Technical parameters/rated power: 89 W
Technical parameters/drain source resistance: 1.22 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.8 W
Technical parameters/product series: IRF6727M
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 32.0 A
Technical parameters/Input capacitance (Ciss): 6190pF @15V(Vds)
Technical parameters/rated power (Max): 2.8 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: DirectFET™ Isometric MX
External dimensions/packaging: DirectFET™ Isometric MX
Physical parameters/operating temperature: -40℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6727MTRPBF
|
Infineon | 类似代替 | Direct-FET |
INFINEON IRF6727MTRPBF 晶体管, MOSFET, N沟道, 180 A, 30 V, 0.00122 ohm, 10 V, 1.8 V 新
|
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