Technical parameters/drain source resistance: 0.00122 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.8 W
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 32A
Technical parameters/Input capacitance (Ciss): 6190pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 2.8W (Ta), 89W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: Direct-FET
External dimensions/packaging: Direct-FET
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6727MTRPBF
|
Infineon | 类似代替 | Direct-FET |
INFINEON IRF6727MTRPBF 晶体管, MOSFET, N沟道, 180 A, 30 V, 0.00122 ohm, 10 V, 1.8 V 新
|
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