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Model SI4403CDY-T1-GE3

Description VISHAY SI4403CDY-T1-GE3 晶体管, MOSFET, P沟道, -13.4 A, -20 V, 0.0125 ohm, -4.5 V, -400 mV

Brand: Vishay Semiconductor

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.0125 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	5 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	5 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Length:	5 mm
Dimensions/Width:	4 mm
Dimensions/Height:	1.55 mm
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	EAR99

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